STP16N65M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STP16N65M2,
STU16N65M2
N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2
Power MOSFETs in TO-220 and IPAK packages
Datasheet − production data
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Figure 1. Internal schematic diagram
, TAB
Features
Order code
STP16N65M2
STU16N65M2
V_DS @ T_Jmax
710 V
710 V
R_DS(on) max
0.36 Ω
0.36 Ω
I_D
11 A
11 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
Order codes
STP16N65M2
STU16N65M2
AM15572v1
Table 1. Device summary
Marking
Package
16N65M2
TO-220
16N65M2
IPAK
Packaging
Tube
Tube
October 2014
This is information on a product in full production.
DocID027086 Rev 1
1/16
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