STP16N60M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STP16N60M2, STU16N60M2
N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2
Power MOSFET in TO-220 and IPAK packages
Datasheet - production data
TAB
3
TAB
TO-220
2
1
IPAK
123
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STP16N60M2
STU16N60M2
VDS
600 V
RDS(on) max.
0.32 Ω
ID
12 A
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Order code
STP16N60M2
STU16N60M2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
16N60M2
TO-220
IPAK
Packaging
Tube
March 2015
DocID027198 Rev 1
This is information on a product in full production.
1/16
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