STP16N10L Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.14 ohm - 16A - TO-220 POWER MOS TRANSISTOR

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STP16N10L
N - CHANNEL 100V - 0.14 Ω - 16A - TO-220
POWER MOS TRANSISTOR
TYPE
V_DSS
R_DS(on)
I_D
STP16N10L
100 V < 0.16 Ω 16 A
s TYPICAL RDS(on) = 0.14 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
V_GS Gate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dV/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
March 1999
Value
100
100
± 15
16
11
64
90
0.4
0.6
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
1/5