STP160N4LF6 Datasheet, PDF (1/14 Pages) –

STP160N4LF6
N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI
DeepGATE™ Power MOSFET in a TO-220 package
Datasheet - production data
TAB
TO-220
3
2
1
Features
Order code V_DS R_DS(on) max I_D P_TOT
STP160N4LF6 40 V 0.0029 Ω 120 A 150 W
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• Logic level drive
• High avalanche ruggedness
• 100% avalanche tested
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
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Order code
STP160N4LF6
Table 1. Device summary
Marking
Package
160N4LF6
TO-220
Packaging
Tube
April 2014
This is information on a product in full production.
DocID026266 Rev 1
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