STP160N3LL Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low on-resistance

STP160N3LL
N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max.
ID
PTOT
STP160N3LL 30 V 3.2 mΩ 120 A 136 W
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STP160N3LL
Table 1: Device summary
Marking
Package
160N3LL
TO-220
Packing
Tube
June 2015
DocID025073 Rev 3
This is information on a product in full production.
1/13
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