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STP15N06L Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |||
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STP15N06L
STP15N06LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP15N06L
STP15N06LFI
VDSS
60 V
60 V
R DS( on)
< 0.15 â¦
< 0.15 â¦
ID
15 A
10 A
s TYPICAL RDS(on) = 0.115 â¦
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s LOGIC LEVEL COMPATIBLE INPUT
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
VDG R
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kâ¦)
VGS
ID
ID
ID M(â¢)
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
July 1993
Val ue
STP15N06L
STP15N06LFI
60
60
± 15
15
10
10
7
60
60
70
35
0. 47
0. 23

2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
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