STP14NF06 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 60V - 0.1ohm - 14A TO-220 STripFET™ POWER MOSFET

STP14NF06
N-CHANNEL 60V - 0.1Ω - 14A TO-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP14NF10
60 V < 0.12 Ω 14 A
s TYPICAL R_DS(on) = 0.1Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100 °C
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
December 2000
Value
Unit
60
V
60
V
±20
V
14
A
10
A
56
A
45
W
0.3
W/°C
6
V/ns
50
mJ
–65 to 175
°C
175
(1) I_SD ≤7A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting Tj = 25°C, ID = 114A, VDD = 15V
°C
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