STP140N8F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STP140N8F7
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code
STP140N8F7
VDS
80 V
RDS(on) max.
4.3 mΩ
ID
90 A
PTOT
200 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code Marking Package Packaging
STP140N8F7 140N8F7 TO-220
Tube
AM01475v1_Tab
October 2014
DocID026822 Rev 2
This is information on a product in full production.
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