STP13N65M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STP13N65M2,
STU13N65M2
N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2
Power MOSFETs in TO-220 and IPAK packages
Datasheet - production data
Features
TAB
TAB
TO-220
3
2
1
3
2
1
IPAK
Figure 1. Internal schematic diagram
, TAB
Order code
STP13N65M2
STU13N65M2
V_DS
R_DS(on)
max
I_D
650 V 0.43Ω
10A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
Order code
STP13N65M2
STU13N65M2
AM15572v1
Table 1. Device summary
Marking
Package
13N65M2
TO-220
IPAK
Packaging
Tube
December 2014
This is information on a product in full production.
DocID026894 Rev 1
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