STP13N60M2 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low gate input resistance

STP13N60M2, STU13N60M2,
STW13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Q_g
Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet − production data
TAB
3
2
1
TO-220
TAB
3
2
1
IPAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Features
Order codes V_DS @ T_Jmax R_DS(on) max I_D
STP13N60M2
STU13N60M2
650 V
0.38 Ω
11 A
STW13N60M2
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STP13N60M2
STU13N60M2
STW13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220
IPAK
TO-247
February 2014
This is information on a product in full production.
DocID023937 Rev 5
Packaging
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