STP135N10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET

STB135N10
STP135N10
N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA
TYPE
V_DSS
R_DS(on)
I_D
STB135N10
STP135N10
100 V
100 V
<0.009 Ω 135 A^(*)
<0.009 Ω 135 A^(*)
s TYPICAL R_DS(on) = 0.007Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well
established and consolidated STripFET technology utiliz-
ing the most recent layout optimization. The device exhib-
its extremely low on-resistance, gate charge and diode’s
reverse recovery charge Qrr making it the ideal switch in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
s HIGH-EFFICIENCY DC-DC CONVERTERS
s 42V AUTOMOTIVE APPLICATIONS
s SYNCHRONOUS RECTIFICATION
s DIESEL INJECTION
s PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(*)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(1)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽²⁾ Peak Diode Recovery voltage slope
E_AS ⁽³⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(1) _{Pulse width limited by safe operating area.}
(*) _{Value limited by wire bonding}
Value
100
100
± 20
135
96
540
150
1
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(2) I_SD ≤ 40A, di/dt ≤ 600A/µs, V_DD ≤B_VDSS, T_j ≤ T_JMAX.
(3) Starting Tj = 25 ^oC, ID = 40A, VDD = 50V
July 2003
1/8
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice