STP130N6F7 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STP130N6F7
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STP130N6F7
VDS
60 V
RDS(on) max.
5.0 mΩ
ID
80 A
PTOT
160 W
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(3)
Order code
STP130N6F7
AM01475v1_Tab
Table 1: Device summary
Marking
Package
130N6F7
TO-220
Packing
Tube
July 2015
DocID027410 Rev 3
This is information on a product in full production.
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