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STP12PF06 Datasheet, PDF (1/8 Pages) STMicroelectronics – P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET | |||
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STP12PF06
P - CHANNEL 60V - 0.18 ⦠- 12A TO-220
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(o n)
STP12PF06
60 V
< 0.20 â¦
s TYPICAL RDS(on) = 0.18 â¦
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATIONL
ID
12 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
Unit
VDS
VDGR
VG S
ID
ID
IDM(â¢)
Ptot
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
60
60
± 20
12
8.4
48
60
0.4
V
V
V
A
A
A
W
W /o C
dv/dt Peak Diode Recovery voltage slope
6
V/ns
Tstg Storage T emperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(â¢) Pulse width limited by safe operating area
( 1) ISD ⤠12 A, di/dt ⤠300 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
1/8
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