STP12NM50_06 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET

STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D²/I²PAK
MDmesh™ Power MOSFET
General features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
550V
550V
550V
550V
<0.35Ω 12A
<0.35Ω 12A
<0.35Ω 12A
<0.35Ω 12A
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100% avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Order codes
Part number
STB12NM50T4
STB12NM50-1
STP12NM50
STP12NM50FP
Marking
B12NM50
B12NM50
P12NM50
P12NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 11
1/17
www.st.com
17