STP12NB30 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP12NB30
STP12NB30FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STP3NB60
300 V
STP12NB30FP 300 V
< 0.40 Ω
< 0.40 Ω
12A
6.5 A
s TYPICAL RDS(on) = 0.34 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
VDGR
VGS
ID
I_D
I_DM ( •)
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
January 1998
Value
ST P12NB30 ST P12NB30FP
300
300
± 30
12
6.5
7.5
4
48
48
125
35
1
0.28
5.5
5.5

2000
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
V
o_C
o_C
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