STP12N60M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge

STP12N60M2
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max. ID
PTOT
STP12N60M2 600 V 0.450 Ω 9 A 85 W
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STP12N60M2
Table 1: Device summary
Marking
Package
12N60M2
TO-220
Packing
Tube
May 2015
DocID027902 Rev 1
This is information on a product in full production.
1/13
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