STP12N50M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge

STP12N50M2
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Q_g
Power MOSFET in a TO-220 package
Datasheet - preliminary data
7$%
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Features
Order code
STP12N50M2
V_DS
500 V
R_DS(on) max I_D
0.38 Ω 10 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Order code
STP12N50M2
.
Table 1. Device summary
Marking
Package
12N50M2
TO-220
Packaging
Tube
June 2014
DocID026516 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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