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STP120N4F6 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 40 V, 3.8 mΩ , 80 A, TO-220 STripFET™ VI DeepGATE™ Power MOSFET
STP120N4F6
N-channel 40 V, 3.8 mΩ , 80 A, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code
STP120N4F6
VDSS
40 V
RDS(on)
max.
4.3 mΩ
1. Current limited by package
■ Standard threshold drive
■ 100% avalanche tested
ID
80 A (1)
Application
■ Switching applications
■ Automotive
Description
This device is a 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$4!"OR
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Table 1. Device summary
Order code
STP120N4F6
Marking
120N4F6
3
!-V
Package
TO-220
Packaging
Tube
May 2011
Doc ID 018846 Rev 1
1/13
www.st.com
13