STP11NM80_10 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

STB11NM80, STF11NM80
STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
TO-220, TO-220FP, D²PAK, TO-247
Features
Type
V_DSS
R_DS(on)
max
R_DS(on)*Q_g
I_D
STB11NM80
STF11NM80
800 V
STP11NM80
STW11NM80
< 0.40 Ω
14Ω*nC 11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best R_DS(on)*Qg in the industry
Application
■ Switching applications
Description
The MDmesh™ associates the multiple drain
process with the company’s PowerMesh™
horizontal layout assuring an outstanding low on-
resistance. The adoption of the company’s
proprietary strip technique yields overall dynamic
performance that is significantly better than that of
similar competition’s products.
TO-247
3
2
1
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
March 2010
Doc ID 9241 Rev 10
1/17
www.st.com
17