STP11NM60_07 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-channel 650V @ T_Jmax - 0.4Ω - 11A TO-220/FP/D²PAK/I²PAK
MDmesh™ Power MOSFET
General features
Type
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
V_DSS
(@T_J=T_Jmax)
R_DS(on)
I_D
650V
<0.45Ω 11A
650V
<0.45Ω 11A
650V
<0.45Ω 11A
650V
<0.45Ω 11A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
i²PAK
Internal schematic diagram
Order codes
Part number
STB11NM60T4
STB11NM60-1
STP11NM60
STP11NM60FP
Marking
B11NM60
B11NM60-1
P11NM60
P11NM60FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
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January 2007
Rev 6
1/16
www.st.com
16