STP11NM60A Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET

STP11NM60A
STP11NM60AFP - STB11NM60A-1
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I²PAK
MDmesh™Power MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP11NM60A
STP11NM60AFP
STB11NM60A-1
600 V
600 V
600 V
<0.45Ω
<0.45Ω
<0.45Ω
11 A
11 A
11 A
n TYPICAL R_DS(on) = 0.4Ω
n HIGH dv/dt
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company’s proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition’s products.
3
2
1
TO-220
123
I²PAK
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
STP11NM60A
P11NM60A
STP11NM60AFP
P11NM60AFP
STB11NM60A-1
B11NM60A
March 2002
PACKAGE
TO-220
TO-220FP
I²PAK
PACKAGING
TUBE
TUBE
TUBE
1/11