STP11NM60 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET

STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D²PAK/I²PAK
MDmesh™Power MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
600 V
600 V
600 V
600 V
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
11 A
11 A
11 A
11 A
TYPICAL R_DS(on) = 0.4Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO
Insulation Winthstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2003
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
INTERNAL SCHEMATIC DIAGRAM
Value
STP(B)11NM60(-1)
STP11NM60FP
600
600
±30
11
11 (*)
7
7 (*)
44
44 (*)
160
35
1.28
0.28
15
--
2500
–65 to 150
150
(*)Limited only by maximum temperature allowed
(1)I_SD<11A, di/dt<400A/µs, V_DD<V_(BR)DSS, T_J<T_JMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
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