STP11N60DM2 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

STP11N60DM2
N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP11N60DM2
VDS @
TJmax.
650 V
RDS(on)
max.
ID
0.420 Ω 10 A
PTOT
110 W
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STP11N60DM2
Table 1: Device summary
Marking
11N60DM2
Package
TO-220
Packing
Tube
June 2016
DocID029388 Rev 1
This is information on a product in full production.
1/12
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