STP110N8F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STP110N8F7
N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP110N8F7
VDS
80 V
RDS(on)max
7.5 mΩ
ID
80 A
PTOT
170 W
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STP110N8F7
Table 1: Device summary
Marking
Package
110N8F7
TO-220
Packaging
Tube
November 2015
DocID027154 Rev 2
This is information on a product in full production.
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