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STP110N8F6 Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low on-resistance | |||
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STP110N8F6
N-channel 80 V, 0.0056 ⦠typ.,110 A, STripFET⢠F6
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code VDS RDS(on)max ID PTOT
TAB
STP110N8F6 80 V 0.0065 ⦠110 A 200 W
3
2
1
TO-220
Figure 1. Internal schematic diagram
'7$%
*
⢠Very low on-resistance
⢠Very low gate charge
⢠High avalanche ruggedness
⢠Low gate drive power loss
Applications
⢠Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET⢠F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
6
Order code
STP110N8F6
$0Y
Table 1. Device summary
Marking
Package
110N8F6
TO-220
Packing
Tube
December 2014
This is information on a product in full production.
DocID026831 Rev 2
1/13
www.st.com
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