STP110N55F6 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-channel 55 V, 4.3 m, 110 A TO-220 STripFET VI DeepGATE Power MOSFET

Features
STP110N55F6
N-channel 55 V, 4.3 mΩ, 110 A TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Preliminary data
Order code
STP110N55F6
V_DSS
55 V
R_DS(on) max
I_D
< 5.2 mΩ 110 A
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STP110N55F6
Marking
110N55F6
Package
TO-220
Packaging
Tube
July 2011
Doc ID 019059 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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