STP10P6F6 Datasheet, PDF (1/15 Pages) STMicroelectronics – P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages

STD10P6F6,
STP10P6F6
P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™
Power MOSFET in DPAK and TO-220 packages
Datasheet — preliminary data
Features
Order codes
STD10P6F6
STP10P6F6
V_DSS
60 V
60 V
R_DS(on) max
0.18 Ω
0.18 Ω
I_D
10 A
10 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Applications
■ Switching applications
Description
These devices are P-channel Power MOSFETs
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest R_DS(on) in all packages.
3
1
DPAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
AM11258v1
Table 1. Device summary
Order codes
STD10P6F6
STP10P6F6
Marking
10P6F6
10P6F6
Package
DPAK
TO-220
Packaging
Tape and reel
Tube
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
June 2012
Doc ID 022967 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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