STP10NB20 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP10NB20
STP10NB20FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
STP10NB20
S TP1 0NB 20F P
200 V
200 V
< 0.40 Ω
< 0.40 Ω
10 A
6A
s TYPICAL RDS(on) = 0.3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VD GR
VGS
I_D
I_D
Drain- gate Volt age (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO Insulation Withstand Voltage (DC)
Tstg Storage T emperat ure
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1997
Value
Unit
STP10NB20 STP10NB20FP
200
V
200
V
± 30
V
10
6
A
6
4
A
40
40
A
85
0.68
30
0.24
W
W/^oC
5.5
5.5
V/ns
2000
V
-65 to 150
o_C
150
o_C
(1) ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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