STP105N3LL Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate drive power losses

STP105N3LL
N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™
Power MOSFET in a TO-220 package
Datasheet − production data
Features
TAB
3
2
1
TO-220
Order code
STP105N3LL
V_DS
30 V
R_DS(on) max. I_D
3.5 mΩ 150 A
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
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Order code
STP105N3LL
Table 1. Device summary
Marking
Packages
105N3LL
TO-220
Packaging
Tube
April 2014
This is information on a product in full production.
DocID023976 Rev 2
1/13
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