STP100N8F6 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STP100N8F6
N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS
STP100N8F6 80 V
RDS(on)max.
0.009 Ω
ID
100 A
PTOT
176 W
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STP100N8F6
Table 1: Device summary
Marking
100N8F6
Package
TO-220
Packing
Tube
February 2016
DocID026838 Rev 3
This is information on a product in full production.
1/15
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