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| STP08IE120F4 Datasheet, PDF (1/11 Pages) STMicroelectronics – Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm | |||
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STP08IE120F4
Emitter Switched Bipolar Transistor
ESBT® 1200 V - 8 A - 0.10 â¦
Preliminary Data
General features
VCS(ON)
IC
0.8 V
8A
RCS(ON)
0.10 W
â High voltage / high current Cascode
configuration
â Low equivalent on resistance
â very fast-switch up to 150 kHz
â Squared RBSOA up to 1200V
â Very low Ciss driven by RG = 47â¦
â Very low turn-off cross over time
Applications
â Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
Order codes
Part Number
Marking
STP08IE120F4
P08IE120F4
Package
TO220FP-4L
Packing
Tube
November 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
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