STN7NF10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.055 ohm - 5A SOT-223 LOW GATE CHARGE STripFET™ II POWER MOSFET

STN7NF10
N-CHANNEL 100V - 0.055 Ω - 5A SOT-223
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STN7NF10
100 V < 0.065 Ω 5 A
s TYPICAL R_DS(on) = 0.055 Ω
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(q) Pulse width limited by safe operating area
December 2002
Value
100
100
±20
5
3.4
20
3.3
0.026
–55 to 150
Unit
V
V
V
A
A
A
W
W/°C
°C
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