STN4NE03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET

®
STN4NE03L
N - CHANNEL 30V - 0.037Ω - 4A - SOT-223
STripFET™ POWER MOSFET
TYPE
ST N4NE03L
V_DSS
R_DS(on)
I_D
30 V < 0.05 Ω
4A
s TYPICAL RDS(on) = 0.037 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
s POWER MANAGEMENT IN
BATTERY-OPERATED AND PORTABLE
EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS
I_D(*)
ID(*)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg St orage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited by package
August 1998
Value
Uni t
30
V
30
V
± 15
V
4
A
2.5
A
16
A
2.5
0.02
W
W/^oC
6
V/ ns
-65 to 150
o_C
150
o_C
(1)ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TjMAX
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