STN3PF06 Datasheet, PDF (1/6 Pages) STMicroelectronics – P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET™ II POWER MOSFET

STN3PF06
P-CHANNEL 60V - 0.18Ω - 3A SOT-223
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STN3PF06
60V
<0.20Ω
2.5A
s TYPICAL R_DS(on) = 0.18Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
2
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and
current has to be reversed
January 2001
Value
60
60
±20
2.5
1.5
10
2.5
0.02
6
–65 to 175
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)I_SD ≤3A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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