STN3P6F6 Datasheet, PDF (1/12 Pages) STMicroelectronics – P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT-223 package

STN3P6F6
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™
Power MOSFET in a SOT-223 package
Datasheet - production data
Features
4
3
2
1
SOT-223
Figure 1. Internal schematic diagram
D (2, 4)
Order code V_DSS
R_DS(on)max
I_D
STN3P6F6 60 V 0.16 Ω @ 10 V 3 A
• R_DS(on) * Qg industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
G (1)
S (3)
Order code
STN3P6F6
Table 1. Device summary
Marking
Package
STN3P6F6
SOT-223
Packaging
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
March 2013
This is information on a product in full production.
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