STN3NF06L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET™ II POWER MOSFET

STN3NF06L
N-CHANNEL 60V - 0.07Ω - 4A SOT-223
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STN3NF06L
60 V
< 0.1 Ω
4A
s TYPICAL R_DS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC & DC-AC COVERTERS
s DC MOTOR CONTROL (DISK DRIVERS, etc.)
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(••) Pulse width limited by safe operating area.
(•) Current limited by the package
December 2002
.
Value
60
60
± 16
4
2.9
16
3.3
0.026
10
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
(1) I_SD ≤ 3A, di/dt ≤150A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 4A, V_DD = 30V
1/8