STN3NE06 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET

®
STN3NE06
N - CHANNEL 60V - 0.08Ω - 3A - SOT-223
STripFET™ POWER MOSFET
TYPE
ST N3NE06
V_DSS
R_DS(on)
I_D
60 V < 0.100 Ω 3 A
s TYPICAL RDS(on) = 0.08 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™ ” stip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V D GR
V _GS
I_D
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tst g St orage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
August 1998
Va l u e
Unit
60
V
60
V
± 20
V
3
A
1 .8
A
12
A
2 .5
0.02
W
W/^oC
6
V/ns
-65 to 150
o_C
150
o_C
(1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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