STN3N40K3 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3 Power MOSFET

STN3N40K3
N-channel 400 V, 3 Ω, 1.8 A SOT-223
SuperMESH3™ Power MOSFET
Features
Order code V_DSS R_DS(on) max I_D
P_W
STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse rcovery characteristics
■ Zener-protected
Application
■ Switching applications
Description
The device is made using the SuperMESH3^TM
Power MOSFET technology that is obtained via
improvements applied to STMicroelectronics’
SuperMESH3^TM technology combined with a new
optimized vertical structure. The resulting product
has an extremely low on resistance, superior
dynamic performance and high avalanche
capability, making it especially suitable for the
most demanding applications.
2
3
2
1
SOT-223
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code
STN3N40K3
Marking
3N40K3
Package
SOT-223
Packaging
Tape and reel
April 2011
Doc ID 17697 Rev 2
1/13
www.st.com
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