STN2NF10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET™ II POWER MOSFET

STN2NF10
N-CHANNEL 100V - 0.23Ω - 2A SOT-223
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STN2NF10
100 V < 0.26 Ω
2A
s TYPICAL R_DS(on) = 0.23 Ω
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC & DC-AC COVERTERS
s DC MOTOR CONTROL (DISK DRIVERS, etc.)
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS(1) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(••) Pulse width limited by safe operating area.
(•) Current limited by the package
Value
Unit
100
V
100
V
± 20
V
2
A
1.26
A
8
A
2.5
W
0.02
W/°C
300
mJ
-65 to 150
°C
150
°C
(1) I_SD ≤1A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
December 2001
1/8
.