STN2NF06L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET™ II POWER MOSFET

STN2NF06L
N-CHANNEL 60V - 0.1 Ω - 2A SOT-223
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STN2NF06L
60 V
<0.12 Ω
2A
s TYPICAL R_DS(on) = 0.1 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s AVALANCHE RUGGED TECHNOLOGY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot(1) Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽²⁾ Peak Diode Recovery voltage slope
E_AS ⁽³⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1) _{Related to Rthj -l}
November 2002
.
Value
Unit
60
V
60
V
± 16
V
2
A
1.2
A
8
A
3
W
8
W/°C
6
V/ns
200
mJ
°C
-55 to 150
°C
(2) I_SD ≤2A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(3) Starting T_j = 25 ^oC, I_D = 2A, V_DD = 30V
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