STN2NE10L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.33ohm - 2A SOT-223 STripFET POWER MOSFET

®
STN2NE10L
N-CHANNEL 100V - 0.33Ω - 2A SOT-223
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STN2NE10L
100 V
< 0.4 Ω
1.8 A
s TYPICAL RDS(on) = 0.33 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Volt age (VGS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
V_{G S}
I_D
I_D
I_DM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
T_stg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
Unit
100
V
100
V
± 20
V
1.8
A
1.3
A
7.2
A
2.5
0.02
W
W /^o C
6
V/ns
-65 to 150
o_C
150
o_C
( 1) ISD ≤ 7.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
March 2000
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