STN2NE10 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET

®
STN2NE10
N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223
STripFET™ POWER MOSFET
TYPE
STN2NE10
V_DSS
R_DS(on)
I_D
100 V < 0.4 Ω
2A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.33 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size™ " stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
January 1999
Value
100
100
± 20
2
1.3
8
2.5
0.02
6
-65 to 150
150
(1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
1/5