STN2NE06 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET

®
STN2NE06
N-CHANNEL 60V - 0.18Ω - 2A - SOT-223
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STN2NE06
60 V < 0.25 Ω
2A
s TYPICAL RDS(on) = 0.18 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V_DGR
V_{G S}
I_D
I_D
I_DM(•)
P_tot
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
T_stg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 1999
Va l u e
Unit
60
V
60
V
± 20
V
2
A
1.3
A
8
A
2.5
0.02
W
W /^o C
6
-65 to 150
150
( 1) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/8