STN2N06 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STN2N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STN2N06
VDSS
60 V
RDS(on)
< 0.250 Ω
IDCONT
2A
ADVANCE DATA
s TYPICAL RDS(on) = 0.21 Ω
s AVALANCHE RUGGED TECHNOLOGY
s SOT-223 CAN BE WAVE OR REFLOW
SOLDERED
s AVAILABLE IN TAPE AND REEL ON
REQUEST
s 150 ^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
2
3
2
1
SOT-223
APPLICATIONS
s HARD DISK DRIVERS
s SMALL MOTOR CURRENT SENSE
CIRCUITS
s DC-DC CONVERTERS AND POWER
SUPPLIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID(*)
ID(*)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area (*) Limited by package
March 1996
Value
60
60
± 20
2
1.3
8
2.7
0.022
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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