STN1NF10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.7ohm - 1A SOT-223 STripFET™ II POWER MOSFET

STN1NF10
N-CHANNEL 100V - 0.7Ω - 1A SOT-223
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STN1NF10
100 V < 0.8 Ω
1A
s TYPICAL R_DS(on) = 0.7 Ω
s EXCEPTIONAL dv/dt CAPABILITY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVERS, etc.)
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
October 2001
.
Value
100
100
± 20
1
0.6
4
2.5
0.02
20
35
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
(1) ISD ≤ 1A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting T_j = 25 ^oC, I_D = 1A, V_DD = 70V
1/8