STN1NB80 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 800V - 16 ohm - 0.2A - SOT-223 PowerMESH] MOSFET

®
STN1NB80
N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST N1N B80
800 V
< 20 Ω
0.2 A
s TYPICAL RDS(on) = 16 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
V_GS
I_D
I_D
I_DM (•)
Ptot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1999
Value
Un it
800
V
800
V
± 30
V
0.2
A
0.12
A
0.8
A
2.9
0.02
W
W /^o C
4
V/ns
-65 to 150
o_C
150
o_C
( 1) ISD ≤ 0.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX