STN1HNC60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh™II MOSFET

STN1HNC60
N-CHANNEL 600V - 7Ω - 0.4A - SOT-223
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STN1HNC60
600 V
<8Ω
0.4 A
s TYPICAL R_DS(on) = 7Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s AC ADAPTORS AND BATTERY CHARGERS
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM ⁽¹⁾
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
Unit
600
V
600
V
±30
V
0.4
A
0.25
A
1.6
A
2.5
W
0.02
W/°C
3.5
V/ns
–65 to 150
°C
150
°C
(1)I_SD ≤0.4A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
1/8