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| STM2DPFS30L Datasheet, PDF (1/6 Pages) STMicroelectronics – P - CHANNEL 30V - 0.145ohm - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER | |||
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STM2DPFS30L
STripFETâ¢P
- CHANNEL 30V - 0.145⦠- 2A MiniS0-8
MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
V D SS
RDS(on )
30V <0.165â¦
SCHOTTKY
IF (AV)
VRRM
1A
40V
ID
2A
V F(M AX)
0. 5 5V
DESCRIPTION:
This product associates the latest low voltage
St ripFET⢠in p-channel version to a low drop
Schottk y diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
convert ers for printers, portable equipment, and
cellular phones.
New MiniSO-8 package features:
s Half footprint area versus standard SO-8, for
application where minimum circuit board
space is necessary.
s Extremely low profile, ideal for low thickness
equipment.
MOSFET ABSOLUTE MAXIMUM RATINGS
S ym b o l
P ar ame te r
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gat e Voltage (RGS = 20 kâ¦)
VGS
ID
ID
ID M( â¢)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
MiniSO-8
INTERNAL SCHEMATIC DIAGRAM
V alu e
30
30
± 20
2
1.3
8
1.25
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V R RM
IF(RMS)
IF (AV)
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Ta=60 oC
δ =0.5
IFSM Surge Non Repetit ive Forward Current
tp= 10 ms
Sinusoidal
dv/dt Critical Rate Of Rise Of Reverse Voltage
(â¢) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
July 1999
V alu e
40
2
1.2
5.5
10000
Un it
V
A
A
A
V/µs
1/6
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