STLD200N4F6AG Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STLD200N4F6AG
Automotive N-channel 40 V, 1.27 mΩ typ., 120 A STripFET™ F6
Power MOSFET in a PowerFLAT™ 5x6 dual side cooling
Datasheet - preliminary data
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
G(4)
Features
Order code
STLD200N4F6AG
VDS
40 V
RDS(on) max.
1.5 mΩ
ID
120 A
 Designed for automotive applications
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(1, 2, 3)
Order code
STLD200N4F6AG
Marking
200
Table 1: Device summary
Package
PowerFLAT™ 5x6 dual side cooling
Packaging
Tape and reel
January 2016
DocID028892 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
1/12
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