STL9P2UH7 Datasheet, PDF (1/14 Pages) STMicroelectronics – Very low on-resistance

STL9P2UH7
P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7
Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
1234
 Very low on-resistance
 Very low capacitance and gate charge
 High avalanche ruggedness
Applications
 Switching applications
Description
This P-channel Power MOSFET utilizes the
STripFET H7 technology with a trench gate
structure combined with extremely low on-
resistance. The device also offers ultra-low
capacitances for higher switching frequency
operations.
Table 1: Device summary
Order code Marking Package Packaging
STL9P2UH7
9P2H7
PowerFLAT™
3.3x3.3
Tape and
reel
For the P-channel Power MOSFET the
actual polarity of the voltages and the
current must be reversed.
Features
Order code VDS
RDS(on)max
ID
STL9P2UH7 20 V 0.0225 Ω @ 4.5 V 9 A
October 2014
DocID025141 Rev 3
This is information on a product in full production.
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